SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and manufacturing method thereof are provided to increase the contact area between the storage of the DRAM device and the embedded plug and to decrease the constant resistance. The bit line pattern comprises the bit line(410) laminated on the substrate(110), the capping line(420) and the bit line spacer(430) that surrounds the side wall of the bit line and the capping line. The protruded embedded plug(510) is positioned between the bit line patterns. The storage node(700) contacts the upper side of the bit line pattern and the protrusion of the protruded embedded plug. The bit line, the protruded embedded plug and storage node include the conductive material.