| 摘要 |
An ion beam etching device is provided to improve the working speed and the productivity by omitting the tilting and rotation of substrate. The ion beam etching device comprises the holder(130) supporting the etch target of the substrate(1) and the ion source(110) irradiating the ion beam to the substrate and the symmetric concentration-type grid(120) inducing the ion beam to the substrate. The function of tilting holder and rotating is performed by symmetric concentration-type grid installed at the front side of the ion source. The symmetric concentration-type grid comprises the ion beam emission space formed with the cone type and guides the ion beam to be irradiated in an inclined state.
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