发明名称 Plasma Processing Apparatus
摘要 This application discloses a practical plasma processing apparatus capable of plasma confinement without plasma-density non-uniformity and electric power loss. The apparatus comprises a plasma shield that surrounds a plasma generation region to prevent plasma from diffusing. The shield has at least one opening. The apparatus comprises a diffusion prevention electrode for preventing the plasma from diffusing through the opening of the plasma shield. The surface of the plasma shield exposed to the plasma is made of insulator. The diffusion prevention electrode is located where electrons diffusing toward the opening or having diffused through the opening from the plasma flow into itself.
申请公布号 US2009044910(A1) 申请公布日期 2009.02.19
申请号 US20080254627 申请日期 2008.10.20
申请人 ANELVA CORPORATION 发明人 OSADA TOMOAKI;NOZAKI YOSHIKAZU
分类号 H01L21/3065;H05H1/46;B01J19/08;C23C16/26;C23C16/509;H01J37/32;H01L21/205;H01L21/30 主分类号 H01L21/3065
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