CAPACITOR, METHOD OF MANUFACTURING CAPACITOR, CAPACITOR MANUFACTURING APPARATUS, AND SEMICONDUCTOR MEMORY DEVICE

摘要

The present invention provides a capacitor including: an under electrode; an upper electrode; and a dielectric film which is provided between the under electrode and the upper electrode, wherein at least a portion of the dielectric film is composed of an aluminum oxide film deposited by an atomic layer deposition method and a titanium oxide film deposited by the atomic layer deposition method. An aluminum composition ratio x and a titanium composition ratio y in the dielectric film preferably comply with 7<=[x/(x+y)]x100<=35.