发明名称 |
System mit kontrolliertem Sauerstoffgehalt und Verfahren zum Regeln der Widerstandseigenschaften eines Speicherbauelements |
摘要 |
A memory cell and method for controlling the resistance properties in a memory material are provided. The method comprises: forming manganite; annealing the manganite in an oxygen atmosphere; controlling the oxygen content in the manganite in response to the annealing; and, controlling resistance through the manganite in response to the oxygen content. The manganite is perovskite-type manganese oxides with the general formula RE 1-x AE x MnO y , where RE is a rare earth ion and AE is an alkaline-earth ion, with x in the range between 0.1 and 0.5. Controlling the oxygen content in the manganite includes forming an oxygen-rich RE 1-x AE x MnO y region where y is greater than 3. A low resistance results in the oxygen-rich manganite region. When y is less than 3, a high resistance is formed. More specifically, the process forms a low resistance oxygen-rich manganite region adjacent an oxygen-deficient high resistance manganite region. |
申请公布号 |
DE602004011585(T2) |
申请公布日期 |
2009.02.19 |
申请号 |
DE20046011585T |
申请日期 |
2004.05.19 |
申请人 |
SHARP K.K. |
发明人 |
HSU, SHENG TENG;ZHANG, FENGYAN |
分类号 |
H01L27/10;H01L27/115;G11C11/15;G11C13/00;H01L27/01;H01L45/00;H01L49/00 |
主分类号 |
H01L27/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|