| 摘要 |
<p>A manufacturing method of the MOSFET device is provided to increase the distance between the channel region and adjacent gates and to minimize the field effect between adjacency gates by forming the gate having the dielectric mask layer used in the element isolation film formation. The dielectric mask layer(205) is formed on the semiconductor substrate to expose the element isolation region. The exposed semiconductor substrate region is etched to form the trench(T). The insulating layer is formed on the semiconductor substrate including the dielectric mask layer to fill the trench. The insulating layer is planarized to expose the dielectric mask layer. The dielectric mask layer and semiconductor substrate region of the gate forming area are recessed. The gate is formed in the gate forming area of the element isolation region and recessed region.</p> |
