METHOD OF FORMING A FERROELECTRIC CAPACITOR AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
摘要
A method of forming a ferroelectric capacitor and method of manufacturing a semiconductor device using the same are provided to form the crystalline diffusion barrier having low defects by forming a crystalline diffusion barrier in the high temperature. The bottom electrode film(105) is formed on the substrate(100). The first crystalline diffusion barrier(150) which prevents diffusion of the ferroelectric film component is formed on the bottom electrode layer. The ferroelectric film is formed on the first crystalline diffusion barrier. The upper electrode is formed on the ferroelectric film. The first crystalline diffusion barrier is formed by using the strontium ruthenate(SrRuO3: SRO). The first crystalline diffusion barrier is formed by the sputtering process of the temperature of 450°C or 550°C.
申请公布号
KR20090017758(A)
申请公布日期
2009.02.19
申请号
KR20070082151
申请日期
2007.08.16
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
HEO, JANG EUN;LEE, CHOONG MAN;KIM, IK SOO;IM, DONG HYUN