发明名称 PHOTOSENSITIVE RESIN COMPOSITION, AND CURED RELIEF PATTERN PRODUCTION METHOD AND SEMICONDUCTOR DEVICE USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide: a photosensitive resin composition having excellent lithography performance and capable of forming a cured relief pattern excellent in mechanical characteristics and heat resistance through low-temperature curing; a cured relief pattern production method using the photosensitive resin composition; and a semiconductor device including a cured relief pattern obtained by the production method. <P>SOLUTION: The photosensitive resin composition comprises a resin comprising a specific repeating unit, a photosensitive agent, a thermo-acid generator, and a compound having at least one of an alkoxymethyl group and an acyloxymethyl group. There are also provided: the cured relief pattern production method using the photosensitive resin composition; and the semiconductor device including a cured relief pattern obtained by the production method. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009037201(A) 申请公布日期 2009.02.19
申请号 JP20080066748 申请日期 2008.03.14
申请人 FUJIFILM CORP 发明人 SATO KENICHIRO;SUGIMOTO NAOYA
分类号 G03F7/039;C08G69/26;G03F7/004;G03F7/023;G03F7/40 主分类号 G03F7/039
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