| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent an electric field from an anode of the bottommost layer of a multi-layer capacitor from entering a semiconductor substrate. <P>SOLUTION: In a multi-layer capacitor structure, a plurality of conductor carrier layers are formed on a substrate, and each of them has a plurality of interdigitated conductive fingers provided in a dielectric material layer, and each of the plurality of interdigitated conductive fingers on each conductor carrier layer extends in parallel with the side of a square region of the dielectric material layer and includes at least one bend of an angle of 90°. The plurality of interdigitated conductive fingers include the plurality of conductor carrier layers including a first set of fingers connected to an anode terminal and a second set of fingers connected to a cathode terminal, and high dielectric constant material layers formed between the plurality of conductor carrier layers, and only the first set of interdigitated conductive fingers connected to the cathode terminal is provided in the bottommost layer that is in closest proximity to the substrate relative to other layers of the plurality of conductor carrier layers. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
