| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a III-V compound semiconductor layer capable of reducing a hydrogen concentration in a III-V compound semiconductor crystal containing Ga (group III) and arsenic and nitrogen (group V) and reducing pile-up on a regrowth interface as well. SOLUTION: After elevating the temperature of a substrate 31 to a first temperature T1 in an atmosphere containing AsH<SB>3</SB>, the substrate 31 is thermally cleaned at the first temperature T1 while making the AsH<SB>3</SB>sufficiently smaller than a supply amount 5 to 15 sccm when growing a crystal using the AsH<SB>3</SB>flow. After the thermal treatment, the supply of the AsH<SB>3</SB>is stopped and metal arsenic is supplied. In an MBE apparatus 13, first to third III-V compound semiconductor layers 33, 35 and 37 are grown on the substrate 31 using metal As. The first III-V compound semiconductor layer 33 is GaAs, the second III-V compound semiconductor layer 35 is GaInNAs, and the third III-V compound semiconductor layer 37 is GaAs. COPYRIGHT: (C)2009,JPO&INPIT
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