| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for producing a high-quality film of hydrogenated amorphous silicon. SOLUTION: This production method includes irradiating a vapor deposition source 3 with an electron beam which is emitted from an electron gun 4 while sweeping the electron beam to melt the vapor deposition source 3. Thereby, silicon of the vapor deposition source 3 vaporizes and deposits on the surface of a substrate 10 to form a silicon film. A film thickness monitor 7 measures a deposition rate of the silicon film, and controls the output of the electron gun 4 so that the deposition rate can be approximately constant on the basis of signals to be sent from the film thickness monitor 7 to the electron gun 4. The deposition rate of the silicon film is preferably 0.02 to 1 nm/s, and more preferably 0.05 to 0.5 nm/s. In order to form the hydrogenated amorphous silicon film on the substrate 10 when vapor-depositing silicon on the substrate 10, the production method further includes irradiating the substrate 10 with an ion beam containing hydrogen ions while the silicon film is deposited, by an ion-beam-assisted vapor-deposition method. COPYRIGHT: (C)2009,JPO&INPIT
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