| 摘要 |
Systems and methods that facilitate characterization of a flash memory device are presented. A characterization component can be associated with a regulator component included in a memory device to facilitate setting and measuring respective drain voltage levels for programming, erase, and soft programming operations at address bit combinations available for the respective operations. The characterization component can utilize external address bits that can be fixed when performing the operations to minimize disruption to the drain voltage measurement flow. The characterization component can detect when a particular operation has already been performed based in part on an applicable portion of the address bit combination associated with such operation, and can bypass such operation at that address bit combination to proceed to the next operation that has yet to be performed thereby efficiently setting and measuring drain voltage levels for various operations and trim settings to characterize the memory device.
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