| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a red-color high-luminance light-emitting diode that eliminates defects caused by high Vf while exhibiting excellent life performance and high luminance, and to provide a manufacturing method for the high-luminance light-emitting diode that assures the stable manufacturing of the high-luminance light-emitting diode with an improved yield and productivity. <P>SOLUTION: The high-luminance light-emitting diode has an AlGaInP 4-element luminescent layer that is grown on a GaAs substrate, a p-type window layer for taking out luminescent light that is grown on the top surface of the AlGaInP 4-element luminescent layer, and an n-type GaP window layer for taking out luminescent light that is grown by a vapor phase epitaxial method on the rear side that is lattice-matched to GaAs on the AlGaInP 4-element luminescent layer after etching and removing of the GaAs substrate. N-type carrier density in an early phase of the growth of the n-type GaP window layer is increased, and then the n-type carrier density of the n-type GaP window layer after the early phase of the growth of the n-type GaP window layer is made lower than the n-type carrier density in the early phase of the growth of the n-type GaP window layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
