METHOD FOR PRODUCING FILMLIKE SEMICONDUCTOR MATERIALS AND/OR ELECTRONIC ELEMENTS BY PRIMARY FORMING AND/OR COATING

摘要

The present invention relates to a production method for filmlike semiconductor materials and/or electronic elements by primary forming and/or coating. A characteristic feature of the method is the application of a size composed of nanoscale, system-inherent substances on the surface of the substrate to be coated or on the surface of the mould used in the primary forming method. Said size enables a filmlike semiconductor material to be released more simply from the substrate after the primary forming or coating process, reduces reactions with the substrate or mould material and hence contamination of the semiconductor material and reduces the heat transfer from the semiconductor material into the substrate with possibly advantageous effects on the microstructure of the semiconductor material, in particular its average grain size. In an advantageous configuration of the invention, the size is used not just with regard to better releasability from the substrate and reduced contamination of the semiconductor material but can furthermore be used in a targeted manner for producing a dopant pattern in the semiconductor material. For this purpose, at least two sizes having different dopant contents are applied to the substrate in a defined pattern. These dopant patterns are transferred during the primary forming and/or coating process by diffusion into the semiconductor material.