| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a pattern capable of forming a fine pattern. SOLUTION: A resist pattern 5 is formed on a resist film 4 provided on a major surface 1a of a substrate 1 to be processed. A solubilization treatment is carried out on a resist film 4a remaining in a space portion 5a of the resist pattern 5 to make the remaining resist film 4a easily soluble in a liquid for removing the remaining resist film 4a and then the liquid is supplied to the remaining resist film 4a. COPYRIGHT: (C)2009,JPO&INPIT |
