发明名称 Biasing and shielding circuit for source side sensing memory
摘要 A shielding circuit for preventing a sense current of a target cell from the influence of a source current of first adjacent cell includes a pre-discharge device, first and second biasing units, first and second voltage pull-down units, and a connection units. The pre-discharge device is for setting the voltage of the sense node to a negative voltage. The first and second biasing units are for biasing the source voltage of the target and the first adjacent cell equal to a biasing voltage, respectively. The first and second voltage pull-down units are for pulling down the source voltage of the target and the first adjacent cell closing to a ground level, respectively. The connection unit is for receiving and outputting the sense current passing through the first biasing unit to the sense node.
申请公布号 US2009046529(A1) 申请公布日期 2009.02.19
申请号 US20070889689 申请日期 2007.08.15
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 CHEN CHUNG-KUANG;HUNG CHUN-HSIUNG;SHIH YI-TE
分类号 G11C7/02 主分类号 G11C7/02
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