| 摘要 |
A vertical gallium-nitride-based LED and method of making a vertical gallium-nitride-based LED using a stop layer is provided.Embodiments of the present invention use mechanical thinning and a plurality of superhard stop points (260,1216) to remove epitaxial layers with a high level of certainty.According one embodiment,the method of making a vertical LED includes forming a plurality of layers on a sapphire substrate (1202,1902),forming a plurality of stop points (260,1216) in the plurality of layers,removing the sapphire substrate (1202,1902) and part of a u-GaN layer (1204,1904) using mechanical thinning,wherein the mechanical thinning stops at an end of the plurality of stop points (260,1216),selectively etching the u-GaN layer (1204,1904) and exposing at least a part of the highly doped stop layer (1206,1906),and forming an n-electrode (1600,2200) on the highly doped stop layer (1206,1906). |
