SOFT RECOVERY DIODE

摘要

A soft recovery diode is provided with an n+ type semiconductor substrate (2); an n-- type base layer (3) formed on the n+ type semiconductor substrate (2); an n- type base layer (4) formed on the n-- type base layer (3); and a p+ type anode layer (5) formed on the n- type base layer (4). The n-- type base layer (3) has an n type impurity at a concentration lower than that in the n- type base layer (4). A pn junction is formed by the p+ type anode layer (5) and the n- type base layer (4). An anode electrode (6) is formed on the p+ type anode layer (5), and a cathode electrode (7) is formed on the lower side of the n+ type semiconductor substrate (2).