REACTOR FOR GROWING CRYSTALS WITH COOLED INLETS

摘要

The present invention relates to a reactor for growing crystals of a compound material; the reactor comprises: a substantially cylindrical reaction chamber (1 ), which is adapted to be arranged in a manner such that the cylinder axis is substantially vertical and which is provided with walls (2, 3), the inner surfaces of which define at least partly an inner cavity (10) of the chamber (1), means adapted to heat said reaction chamber (1), in particular said cavity (10); the reaction chamber (1 ) comprises inlet means (4, 8) for feeding several precursor gases of said compound material into said cavity (10), which are located in the lower zone of the chamber (1), an assembly (6) adapted to hold at its bottom a seed or a substrate on which said growth takes place and located in the upper zone of the chamber (1 ), so that at least said seed or substrate and the growing crystal are kept within said cavity (10), outlet means (5) for discharging exhaust gases from said cavity (10), which are arranged around said assembly (6) in the upper zone of said chamber (1); the inlet means (4, 8) comprise: an opening (4) obtained in a bottom wall (2) of the chamber (1 ), an injector device (8) arranged outside said cavity (10) and adapted to inject at least a first and a second precursor gases of said compound material simultaneously into said cavity (10) through said opening (4); said injector device (8) is adapted to keep said two precursor gases cold and separate from each other until injection takes place.