MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of improving gate withstand voltage decline defect in the semiconductor device provided with a top gate type structure. SOLUTION: The manufacturing method of the top gate type semiconductor device has a step of forming a level difference by etching the surface of an initial insulating film 2 so as to be lower than the surface of an n type semiconductor crystal layer 16 by the thickness of 50% to 100% of the thickness of a gate insulating film 9 on the boundary surface of the surface of the initial insulating film 2 and the surface of the (n) type semiconductor crystal layer 16 between a step of forming a function region including a (p) type base region 13 and an n++ type emitter region 14 in the (n) type semiconductor crystal layer 16 clamped by the initial insulating film 2 and formed so as to be separated from a semiconductor substrate 1 by a substrate insulating film and a step of forming a MOS gate having a gate electrode 10 formed through the gate insulating film 9 on the surface of the (p) type base region 13. COPYRIGHT: (C)2009,JPO&INPIT