发明名称 METHOD FOR FABRICATING SILICON FILM AND SILICON NITRIDE FILM
摘要 PROBLEM TO BE SOLVED: To provide a heating element CVD method which extends the lifetime of a heating element and improves a fixing method of the heating element and has an improved productivity, with respect to a heating element CVD device wherein raw material gas introduced into a treatment vessel (vacuum chamber) is decomposed and/or activated by the heating element to deposit a thin film on a substrate disposed in the treatment vessel. SOLUTION: In the heating element CVD method, the heating element CVD device is used wherein a connection part for connecting the heating element to a power supply mechanism and/or a supporting part for supporting the heating element on a support member are covered with a cover with a gap therebetween without contacting the heating element, and a gas introducing mechanism capable of introducing gas to gaps among the cover, the connection part, and the supporting part is provided, and purge gas is introduced to an end part of the heating element inserted to a heating element insertion port provided in the connection part. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009038398(A) 申请公布日期 2009.02.19
申请号 JP20080283110 申请日期 2008.11.04
申请人 CANON ANELVA CORP 发明人 ISHIBASHI KEIJI;TANAKA MASAHIKO;KARASAWA MINORU
分类号 H01L21/205;C23C16/24;C23C16/42;C23C16/44;H01L21/31;H01L21/318 主分类号 H01L21/205
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