| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory capable of suppressing an increase in current consumption (power consumption) and a long access time of a memory cell. <P>SOLUTION: The memory (diode ROM) includes a plurality of word lines WL, a plurality of bit lines BL disposed crossing the plurality of word lines WL, selection transistors 2 connected to the plurality of word lines WL respectively and turning on when corresponding word lines WL are selected, a plurality of memory cells 4 including diodes 3 having cathodes connected to one of source and drain regions of selection transistors 2, source lines S0 to S3 connected to other sides of the source and drain regions of the selection transistors 2, and a data decision circuit 11 connected to the source lines S0 to S3 and deciding data read out of selected memory cells 4, wherein the driving capability of the bit lines BL is different depending on positions where the bit lines BL are disposed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
