POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND USED IN THE COMPOSITION

摘要

Disclosed is a positive resist composition which is good in pattern shape, line-edge roughness, pattern collapse, sensitivity and resolution in conventional exposure (dry exposure), liquid immersion exposure and double exposure. Also disclosed is a pattern forming method using such a positive resist composition. Specifically disclosed is a positive resist composition containing (A) a compound which generates an acid when irradiated with an active ray or radiation, (B) a compound whose solubility in an alkali developer is increased by the action of an acid, and (C) a compound having a specific structure, which is decomposed and generates an acid by the action of an acid. Also specifically disclosed are a pattern forming method using such a positive resist composition, and compounds used in the positive resist composition.