SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device provided with an active layer or a light receiving layer including N and a semiconductor layer including P, and to provide a manufacturing method of the semiconductor device on a mass production basis. SOLUTION: The manufacturing method comprises a process of growing a group III-V compound semiconductor layer including nitrogen on a substrate by an MBE method and a process of growing the group III-V compound semiconductor layer including phosphor on the nitrogen-containing semiconductor layer by a chloride vapor growth method. COPYRIGHT: (C)2009,JPO&INPIT