SEMICONDUCTOR DEVICE, VOLTAGE SUPPLY SYSTEM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device whose ESD resistance can be improved. SOLUTION: The semiconductor device 20 has an internal circuit 1 including an NMOS transistor 31, and an electrostatic protection circuit including a protection element 41 having a p-type well diffusion region 11 and a pair of n-type regions 12a and 12b opposed to each other at a predetermined mutual interval in the p-type well diffusion region 11. Then the p-type well diffusion region 11 of the protection element 41 included in the electrostatic protection circuit 2 is configured to have higher p-type impurity density than the p-type well diffusion region 4 of the NMOS transistor 31 included in the internal circuit 1. COPYRIGHT: (C)2009,JPO&INPIT