| 摘要 |
PROBLEM TO BE SOLVED: To provide a normally off type nitride semiconductor transistor while suppressing a current collapse. SOLUTION: The semiconductor transistor has a substrate 501, a buffer layer 502, a first nitride semiconductor layer 503, a second nitride semiconductor layer 504, a p-type nitride semiconductor layer 506, a source electrode 508, a drain electrode 509 and a gate electrode 510. A dopant layer 51 containing a p-type dopant is formed at a part of the second nitride semiconductor layer 504 disposed below the p-type nitride semiconductor layer 506. COPYRIGHT: (C)2009,JPO&INPIT
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