摘要 |
<p>Nanowire-based photodiodes (100, 200, 300, 400) are disclosed. The photodiodes include a first optical waveguide (102, 202, 302, 402) having a tapered first end (106, 206, 306, 406), a second optical waveguide (104, 204, 304, 404) having a tapered second end (110, 210, 310, 410), and at least one nanowire (114, 214, 314, 414) comprising at least one semiconductor material connecting the first and second ends (108, 112, 208, 212, 308, 312, 408, 412) in a bridging configuration. Methods of making the photodiodes are also disclosed.</p> |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;WANG, SHIH-YUAN;TAN, MICHAEL;BRATKOVSKI, ALEXANDRE;WILLIAMS, R. STANLEY;KOBAYASHI, NOBUHIKO |
发明人 |
WANG, SHIH-YUAN;TAN, MICHAEL;BRATKOVSKI, ALEXANDRE;WILLIAMS, R. STANLEY;KOBAYASHI, NOBUHIKO |