SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique for reducing the area of a semiconductor device comprising a resistive element so that the area is smaller than before. SOLUTION: N type epitaxial layers 2a and 2b are formed on the front surface of a P type semiconductor substrate 1. A P+ separating layer 3 for electrically separating the epitaxial layer 2a and the epitaxial layer 2b are formed. The P+ separating layer 3 is formed in a circular shape in such a manner that a portion of a polysilicon resistor layer 5 and the epitaxial layer 2a are surrounded. An insulating film 4 is formed on the epitaxial layers 2a and 2b. The polysilicon resistor layer 5 is formed via the insulating film 4. An insulating film 6 is formed on the insulating film 4 in such a manner that the insulating film 6 covers the polysilicon resistor layer 5. Contact holes 7a and 7b reaching the polysilicon resistor layer 5 are formed in the insulating film 6. Wiring layers 8a and 8b are formed in contact holes 7a and 7b, respectively. COPYRIGHT: (C)2009,JPO&INPIT