| 摘要 |
<p>A semiconductor device fabricating method is provided to improve uniformity of a pattern by etching an etched layer with an amorphous carbon layer pattern having a vertical shape. An etched layer is formed on a substrate(21). An amorphous carbon layer and a hard mask film pattern are successively molded on an etched layer. The amorphous carbon layer is etched by using the hard mask film pattern as an etching barrier. A sidewall protection layer(25) is formed owing to reaction of the carbon component of the amorphous carbon layer pattern(23A) and the sulfur compound of etching gas. An etched layer pattern(22A) is formed by etching the etched layer. The shape deformation of the amorphous carbon layer pattern is improved by chemically hardening the side wall of the amorphous carbon layer pattern. The amorphous carbon layer is etched by using the etching gas including the sulfur to harden the side wall of the amorphous carbon layer pattern.</p> |
