SEMICONDUCTOR DEVICE HAVING A TRENCH ISOLATION REGION AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device having trench isolation region and a manufacturing method thereof are provided to improve carrier mobility in a PMOS(P-channel Metal Oxide Semiconductor) transistor by forming a gap fill film and a buffer pattern on a trench isolation region. A first active region(110a) is restricted by a first trench region(109a). A first buffer pattern(119a) is formed inside the first trench region. A first gap fill film(121a) is formed on the first buffer pattern. The first gap fill film along with the first buffer pattern is filled in the first trench region. The first gap fill film is compacted by the first buffer pattern. A first transistor is formed on the first active region.