| 摘要 |
<p>A method of forming the bulb type recess in the semiconductor device is provided to remove the fume generated in the wafer after the neck pattern formation of the bulb type recess in the same chamber by in-situ and to increase the yield. The first recess (25a) is formed by etching the gate reserved area of the semiconductor substrate(20) to the predetermined depth. The hard mask oxide layer(21), the hard mask amorphous carbon film, and the SiON film and photoresist pattern are successively formed in the semiconductor substrate. The spacer is formed in the first recess side wall and the fume removal process is performed using the plasma. The second recess of sphere is formed by the isotropic etching using the spacer as the barrier. The first recess formation and fume removal are performed in the same chamber by in-situ.</p> |
