| 摘要 |
<p>A semiconductor device fabricating method is provided to improve the yield of a semiconductor device by effectively removing an etching by-product by using a glue layer. An etched layer is formed on a substrate(31). A first hard mask film, a second hard mask film, a reflection barrier layer and a photoresist pattern are successively molded on the etched layer. The reflection barrier layer, the second hard mask film and the first hard mask film are successively etched by using the photoresist pattern as an etching barrier. A glue layer is formed on the substrate including a groove. The glue layer under the groove except for the glue layer of the side wall of the groove is etched by performing an etch back process. The first hard mask layer pattern under the groove is etched. A part of the etched layer is etched with the etch process. An etching by-product(39) is formed in the side wall of the etched glue layer pattern. A contact hole(40) is formed by etching the etched layer.</p> |
