| 摘要 |
<p>A thin film transistor, a manufacturing method thereof, and a display device including the same are provided to prevent degradation of electrical property of a thin film transistor by removing metallic residue remaining on a substrate. An auxiliary electrode(110a, 110b) is formed on a substrate(100). A source electrode(120a) and a drain electrode(120b) cover the auxiliary electrode. A semiconductor layer(130) is connected to the source electrode and the drain electrode, and includes oxide. A gate insulating film(140) is formed on the semiconductor layer. A gate electrode(150) is formed on the gate insulating film in order to correspond to a fixed region of the semiconductor layer.</p> |
