| 摘要 |
<p>A semiconductor device fabricating method is provided is provided to form a normal pattern by etching an amorphous carbon film to a focused ion beam mode. An etched layer(22), an amorphous carbon film and a hard mask film are successively formed on a substrate(21). A first anti-reflection film and a first photoresist pattern are successively molded on the hard mask film. A second polysilicon film pattern is molded by etching the first anti-reflection film and the second polysilicon film. The first photoresist pattern and the first anti-reflection film are removed. The second anti-reflection film is formed on the second polysilicon film pattern. A second photoresist pattern is molded on the second anti-reflection film. A second silicon oxynitride film pattern is molded by etching the second anti-reflection film and the second silicon oxynitride film. The first polysilicon film and the first silicon oxynitride film are etched and a polysilicon film pattern(25A) and a first silicon oxynitride film pattern(24A) are formed. The amorphous carbon film is etched and an amorphous carbon film pattern(23A) is formed. The etched layer is etched and an etched layer pattern is molded.</p> |
