| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method that can inhibit deterioration at a conductor junction part by a temperature cycle, prevent breakdown voltage from being reduced by element damage, to increase conduction capacity, and to shorten manufacturing time. SOLUTION: In this semiconductor device, the lower surfaces of insulating substrates 2A and 2B where an object to be connected including a semiconductor chip 1 or an electrode 3 is provided on the upper surface are joined onto a base plate 4, and the semiconductor chip 1 is connected to the electrode 3 by a connection conductor 5. On the surfaces of the insulating substrate 2A and 2B, metal foil 7 is provided. The metal foil 7 has a thermal coefficient of expansion that is nearly the same as or approximates that of the semiconductor chip 1. The connection conductor 5 is made of a conductive member having high, flat stiffness, and a connection end part 5b is brazed to the semiconductor chip 1 and electrode 3. |
