SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to suppress stress of a gate by adding thermal stress to gate material in advance in a capping film forming process. A groove(202) is formed by etching an active area of a semiconductor substrate(200) including an element isolation film(201). A gate insulating film(210), a gate first conductive film(220) and a gate second conductive film(230) are successively evaporated on the semiconductor substrate including the groove. An LP-nitride film(240) is evaporated on the gate second conductive film. An annealing is performed in the LP-nitride film. A PE-nitride film(250) is evaporated on the annealed LP-nitride film. A gate hard mask film consisting of a lamination film of the PE-nitride film and the LP-nitride film is formed. A photosensitive pattern covering a gate forming area is formed on the PE-nitride film. The PE-nitride film and the LP-nitride film are etched by using the photosensitive pattern as an etching mask. The gate second conductive film is etched by using the PE-nitride film as described and the LP-nitride film which are etched. A capping film(260) of nitride film series is formed on the gate first conductive film, the gate second conductive film, the LP-nitride film and the PE-nitride film. The capping film, the gate first conductive film and the gate insulating film are etched and a gate(270) of a semiconductor device is formed.