发明名称 CONFIGURABLE PLASMA VOLUME ETCH CHAMBER
摘要 A plasma processing chamber is provided. The plasma processing chamber includes a bottom electrode configured to support a substrate and a top electrode located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume for plasma during processing which is larger than the first volume.
申请公布号 KR100883948(B1) 申请公布日期 2009.02.18
申请号 KR20037017146 申请日期 2003.12.29
申请人 发明人
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
代理机构 代理人
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