| 摘要 |
A method of manufacturing a capacitor for a semiconductor device is provided to improve electrical characteristic of a capacitor by selectively and thickly forming an etch stopping layer of the region in which a contact hole are formed. An etch stopping layer is formed on a substrate(11). The certain area of the etch stopping layer is selectively etched. A first and a second sacrificing layers are laminated on an etch stopping layer pattern(12A). The first and the second sacrificing layer are etched by using a photosensitive pattern and a hard mask pattern as an etch barrier. A contact hole is formed by etching the first and the second sacrificing layer. The substrate is exposed by etching the etch stopping layer pattern of the bottom of the contact hole. The bottom electrode(18) is formed within the contact hole according to the surface of the contact hole. The first and the second sacrificing layer are removed by performing a dip-out process. A cylinder shape capacitor is formed by laminating a dielectric layer(19) and an upper electrode(20) on the overall structure including the bottom electrode.
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