| 摘要 |
<p>A fabrication method of a mask for a semiconductor device includes the steps of: applying a first photoresist film on a silicone wafer; sequentially stacking a first insulation film, a second insulation film, and a second photoresist film on the first photoresist film; patterning the second photoresist film by an etching process; etching and patterning the first and second insulation films by using the patterned second photoresist film as a mask; etching and patterning the first photoresist film by using the patterned first and second insulation films, and patterned second photoresist film as a mask; removing the second photoresist film; etching a predetermined portion of the patterned first insulation film; depositing a metal on the wafer including the first photoresist film, the first insulation film having the predetermined etched portion, and the second insulation film; and removing the first photoresist film, and first and second insulation films from the wafer. Since a sidewall of the photoresist film has a predetermined portion on which the metal is not deposited and thus the metal is separately formed on an upper surface of the photoresist film and on the wafer when depositing the metal, the present invention is capable of removing the metal on the upper surface of the photoresist film by being separated from the metal formed on the wafer.</p> |
