Interpenetrating network for chemical mechanical polishing

摘要

Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer (202,302,402) comprising an interpenetrating network including a continuous non-fugitive phase (207,307,407) and a substantially co-continuous fugitive phase (205,305,405). Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.