| 摘要 |
902,559. Semi-conductor devices. SIEMENS - SCHUCKERTWERKE A.G. May 15, 1961 [May 13, 1960], No. 17695/61. Class 37. In the production of a semi-conductor device the surface 12 (Fig. 2) of a body 11 of monocrystalline material is heavily doped so as to produce a layer of the opposite type. The layer is then divided by etched channels 13 (Fig. 3), and the device reheated so as to increase the depth of penetration of the doping material (Fig. 4). In a particular embodiment, N-type silicon is sealed with aluminium in an exhausted quartz vessel which is heated at a temperature of 1220-1240‹ C. for 30 minutes to produce the thin, strongly doped, surface layer. The device is then covered with wax which is removed in the region of the etch pit. After the production of these pits by etching the device is heated in vacuo for about 24 hours. In the arrangement shown in Fig. 5, a metallic electrode 16 is produced by alloying on a gold boron foil. A ring-shaped electrode 17 is produced in the region 14 and a further N region is produced by alloying in a gold antimony foil provided with an electrode 19. Where P-type silicon is used as the starting material phosphoros may be used as the dopant. The invention may be applied to an alloying process, e.g. a boron-containing gold foil may be alloyed to one face of a semiconductor wafer and the surface eutectic formed on cooling removed by means of aqua regia. The recrystallation layer thus exposed is divided by etching and the doping depth increased by heating. |
