CONDUCTIVE HARD MASK TO PROTECT PATTERNED FEATURES DURING TRENCH ETCH
摘要
<p>A method is provided for forming patterned features using a conductive hard mask, where the conductive hard mask protects those features during a subsequent trench etch to form Damascene conductors providing electrical connection to those features from above. The thickness of the hard mask provides a margin to avoid overetch during the trench etch which may be harmful to device performance. The method is advantageously used in formation of a monolithic three dimensional memory array.</p>
申请公布号
EP2025000(A2)
申请公布日期
2009.02.18
申请号
EP20070784023
申请日期
2007.05.22
申请人
SANDISK 3D LLC
发明人
RADIGAN, STEVEN, J.;RAGHURAM, USHA;DUNTON, SAMUEL, V.;KONEVECKI, MICHAEL, W.