发明名称 Power semiconductor module and fabrication method thereof
摘要 <p>An elastic printed board (102) is provided so that stress applied by the silicon gel (101) is absorbed by the printed board (102). Further, the printed board (102) is formed to be so narrow that the stress may be escaped. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board served as current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and crack of the cover plate (105).</p>
申请公布号 EP1868242(A3) 申请公布日期 2009.02.18
申请号 EP20070011562 申请日期 2007.06.13
申请人 HITACHI, LTD. 发明人 OYAMA, KAZUHIRO;MORI, MUTSUHIRO;SAITO, KATSUAKI;KOIKE, YOSHIHIKO
分类号 H01L25/00;H01L25/065;H01L25/07 主分类号 H01L25/00
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