| 摘要 |
<p>A CMOS imaging device (120) formed of a plural CMOS photosensors arranged in a row and column formation, wherein a first (120D12) and second (120D22) CMOS photosensor adjacent with each other in a column direction and a third (120D13) and fourth (120D14) CMOS photosensor adjacent with the first and second CMOS photosensors in a row direction are formed in a single, continuous device region defined on a semiconductor substrate by a device isolation region (120PW,120I).
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