SEMICONDUCTOR PACKAGE AND FABRICATING METHOD THEREOF

摘要

A semiconductor package and manufacturing method thereof are provided to omit the additional lamination process by stacking the semiconductor die using bond pads. The first silicon wafer(100) has the third side(100c) connecting the flat second side(100b), the flat first side(100a). The first active layer(220) has the first side and the second side, and is formed in the first side of the first silicon wafer. A plurality of first bond pads(240) is formed in the first side of the first active layer in order to be electrically connected to the first active layer. The first passivation layer(260) is formed in the first side of the first active layer and exposes the first bond pad. The second active layer(320) is formed in the second side of the first silicon wafer. The second semiconductor die(300) comprises the second passivation layer(360) exposing the second bond pad. The first penetration electrode(400) electrically connects the first semiconductor die(200) and the second semiconductor die. The first solder bump (500) is electrically connected with the second bond pad.