SEMICONDUCTOR DEVICE INCLUDING AN OXIDE SEMICONDUCTOR THIN FILM LAYER OF ZINC OXIDE AND MANUFACTURING METHOD THEREOF

摘要

A manufacturing method of a semiconductor device includes forming an oxide semiconductor thin film layer of zinc oxide, wherein at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d002 of at least 2.619Å.