| 摘要 |
There is provided a method of manufacturing a semiconductor device. The method includes the successive steps of: (a) providing a semiconductor substrate 21; (b) forming a plurality of semiconductor chips 11 having electrode pads 23 on the semiconductor substrate; (c) forming internal connection terminals 12 on the electrode pads; (d) forming an insulating layer 13 on the plurality of semiconductor chips to cover the internal connection terminals; (c) forming a metal layer 33 on the insulating layer; (f) pushing a whole area of the metal layer to bring the metal layer into contact with upper end portions 12-1 of the internal connection terminals; (g) pushing portions of the metal layer which contact the upper end portions of the internal connection terminals, thereby forming first recesses 12-1A in the internal connection terminals, and thereby forming second recesses 14A in the metal layer; and (h) forming wiring patterns 14 by etching the metal layer 33. |
