METHOD FOR FABRICATING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing contact hole of semiconductor device is provided to secure process margin in forming a contact hole by using a hard mask, a spacer, and aluminum having high etching selection ratio as a sacrificing film. A plurality of conductive patterns(102) is formed on a substrate(101). A hard mask(103) is formed on a top of a plurality of conductive patterns. A spacer(104) is formed on a side wall of a plurality of conductive patterns. An aluminum film(105A) is filled between the conductive patterns. The aluminum film except for a predetermined contact region is selectively etched. An insulating film(108) is filled between the conductive patterns of a part etched in the aluminum film. The contact region is opened by etching the spacer and by removing a rest aluminum film.