| 摘要 |
A semiconductor memory device includes a plurality of active regions, and a gate electrode in a fish bone shape arranged on each active region. In each active region, a plurality of source regions and a plurality of drain regions are arranged in a matrix manner. The source regions are commonly connected to a source line, and the drain regions are each connected to a lower electrode of a different memory element. According to the present invention, it is possible to assign three cell transistors connected in parallel to one memory element, so that an effective gate width is further increased.
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