发明名称 |
Ferromagnetic memory cell and methods of making and using the same |
摘要 |
In a first aspect, a first apparatus is provided. The first apparatus is a memory cell that includes (1) a semiconductor fin enclosure formed on an insulating layer of a substrate; and (2) a ferromagnetic material within the semiconductor fin enclosure. A top surface of the ferromagnetic material is below a top surface of the semiconductor fin enclosure. Numerous other aspects are provided.
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申请公布号 |
US7491994(B2) |
申请公布日期 |
2009.02.17 |
申请号 |
US20050216387 |
申请日期 |
2005.08.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;HO HERBERT LEI;HSU LOUIS LU-CHEN;MANDELMAN JACK ALLAN |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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